On the kinetics of spatial atomic layer deposition
نویسندگان
چکیده
منابع مشابه
Atomic Layer Deposition of TiO
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A feature scale simulator for atomic layer deposition (ALD) is presented that combines a Boltzmann equation transport model with chemistry models. A simple but instructive chemistry is considered; one reactant species adsorbs onto the surface, and a second reactant reacts with it from the gas phase (Eley–Rideal). This work includes potential desorption of the adsorbed species during purge steps...
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Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this stud...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2013
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4756692